The formation of elevated barrier height Schottky diodes to inp and In0.53Ga0.47as using thin, excimer laser-deposited Cd interlayers
- 1 November 1990
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 19 (11) , 1239-1246
- https://doi.org/10.1007/bf02673338
Abstract
No abstract availableKeywords
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