In situ RBS and channeling study of molecular beam epitaxial growth of metals and semiconductors on semiconductors
- 1 May 1991
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 56-57, 780-784
- https://doi.org/10.1016/0168-583x(91)95026-a
Abstract
No abstract availableKeywords
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