Strain mapping in [111] and [001] InGaAs/GaAs superlattices
- 15 January 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (3) , 286-288
- https://doi.org/10.1063/1.102810
Abstract
Raman area maps measuring the strain in lattice-mismatched [111] and [001] oriented InxGa1−xAs/GaAs superlattices (x=0.1, 0.17) are presented and compared with independent x-ray rocking curve studies of the average strain in the same samples. We find that the LO phonon frequency, but not the TO frequency, is a valid measure of strain for [111] oriented superlattices exhibiting one-mode behavior. This is explained by the lack of compensation between the effects of alloying and strain for the TO mode in InxGa1−xAs. The capability to nondestructively map small growth variations in superlattice and buffer layer constituents is demonstrated.Keywords
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