Raman Scattering from InGaAs/GaAs strained-layer superlattices
- 1 October 1988
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 68 (2) , 211-214
- https://doi.org/10.1016/0038-1098(88)91102-7
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Relaxation of strained-layer semiconductor structures via plastic flowApplied Physics Letters, 1987
- Variation of the critical layer thickness with In content in strained InxGa1−xAs-GaAs quantum wells grown by molecular beam epitaxyApplied Physics Letters, 1987
- Growth and properties of GaxIn1−xAs–GaAs strained layer superlattices grown by low-pressure metal-organic vapour-phase epitaxyCanadian Journal of Physics, 1987
- Determination of critical layer thickness in InxGa1−xAs/GaAs heterostructures by x-ray diffractionApplied Physics Letters, 1987
- Growth of GaxIn1−xAs by low-pressure metalorganic vapor-phase epitaxyJournal of Applied Physics, 1986
- Characterization of GaxIn1−xAs/GaAs heterostructures grown by low pressure MOVPEJournal of Crystal Growth, 1986
- Erratum: Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructures [Appl. Phys. Lett. 4 7, 322 (1985)]Applied Physics Letters, 1986
- GaInAs/GaAs strained-layer superlattices grown by low pressure metalorganic vapor phase epitaxyApplied Physics Letters, 1986
- Calculation of critical layer thickness versus lattice mismatch for GexSi1−x/Si strained-layer heterostructuresApplied Physics Letters, 1985
- Dependence of critical layer thickness on strain for InxGa1−xAs/GaAs strained-layer superlatticesApplied Physics Letters, 1985