Switching characteristics of poly bipolar circuits at liquid nitrogen temperature
- 6 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- High performance operation of silicon bipolar transistors at liquid nitrogen temperaturePublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- Optimization of bipolar transistors for low temperature operationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1987
- Cryogenic behavior of scaled CMOS devicesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984
- The effect of base doping on the performance of Si bipolar transistors at low temperaturesIEEE Transactions on Electron Devices, 1981