Fabrication and Characteristics of an Integrated DFB Laser/Amplifier Having Reactive-Ion-Etched Tilted End Facets
- 1 December 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (12A) , L2430
- https://doi.org/10.1143/jjap.29.l2430
Abstract
We describe the fabrication and characteristics of a DFB laser monolithically integrated with an optical traveling-wave amplifier prepared using OMVPE/LPE hybrid growth. A unique feature is its 7°-tilted end facets formed by reactive ion etching for reduction of optical crosstalk. Owing to the low reflectivity of the facets, the elemental devices operate with little interference.Keywords
This publication has 3 references indexed in Scilit:
- Tunable MQW-DBR laser with monolithically integrated GaInAsP/InP directional coupler switchElectronics Letters, 1989
- Reflection loss of laser mode from tilted end mirrorJournal of Lightwave Technology, 1989
- Complete single longitudinal mode oscillation in a GaAlAs/GaAs distributed feedback laser with a modulated stripe width structure fabricated using reactive ion etchingApplied Physics Letters, 1987