Complete single longitudinal mode oscillation in a GaAlAs/GaAs distributed feedback laser with a modulated stripe width structure fabricated using reactive ion etching

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Abstract
A modulated stripe width structure (MSW) has been applied to a GaAlAs/GaAs distributed feedback buried heterostructure laser to obtain complete single longitudinal mode oscillation. An MSW device having a gradual modulation scheme and antireflecting films on the cleaved facets has been fabricated using reactive ion etching (RIE). Principal results include realization of a reactive ion etched second-order grating with the grooves as deep as 0.15 μm after regrowth and a modulated stripe having extremely fine definition made possible by RIE. The device had a spectrum which agreed markedly well with an analytical result. The effective functioning of the MSW structure has thereby been confirmed experimentally.