The Investigation of a Transition Layer in Epitaxial GaAs by the Low Temperature Photoluminescence Technique
- 16 May 1985
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 89 (1) , K61-K64
- https://doi.org/10.1002/pssa.2210890158
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Luminescence and Excitation Spectra of Exciton Emission in GaAsPhysica Status Solidi (b), 1974
- Thermal Dissociation of Excitons Bounds to Neutral Acceptors in High-Purity GaAsPhysical Review B, 1971
- Cause of the High Pesistance Region at Vapour Epitaxial GaAs Layer-Substrate InterfaceJapanese Journal of Applied Physics, 1971
- Acceptor Luminescence in High-Purity-Type GaAsPhysical Review Letters, 1970
- Identification of exciton-neutral donor complexes in the photoluminescence of high purity GaAsSolid State Communications, 1970
- Bound-Exciton, Free-Exciton, Band-Acceptor, Donor-Acceptor, and Auger Recombination in GaAsPhysical Review B, 1968