Deep high-dose erbium implantation of low-loss siliconoxynitride waveguides
- 27 October 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (22) , 1850-1852
- https://doi.org/10.1049/el:19941294
Abstract
Photoluminescence studies of low-loss SiON waveguides deeply (2.8 MeV) implanted with erbium at concentrations up to 1 atm.% are reported. Rapid thermal annealing at 900°C is found to repair most of the implantation damage and results in a 5.3 ms 4I13/2 lifetime for 0.25 atm.% Er concentration. Measurements in 1 atm.% doped samples show significant erbium ion-ion interactions.Keywords
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