ION-IMPLANTATION INDUCED OPTICAL ABSORPTION EDGE SHIFTS IN GaP

15 October 1970

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 17 (8) , 323-325
https://doi.org/10.1063/1.1653419

Abstract

The effects of implantation of argon on the optical properties of GaP films and bulk have been investigated for doses of 10¹³ to 10¹⁵/cm² and energies between 1.5 and 3 MeV. Implantation of ordered films and bulk GaP results in a marked change in the optical absorption edge from about 2.3 eV to less than 1.0 eV, similar to behavior observed for amorphous films and for those subject to neutron irradiation. A maximum value of 3.22 has been observed for the index of refraction of implanted films as compared with 3.06 for bulk or highly ordered films. Bulk optical behavior can be recovered for implanted GaP with annealing at temperatures below 600°C.

Keywords

This publication has 3 references indexed in Scilit:

ESR AND OPTICAL ABSORPTION STUDIES OF ION-IMPLANTED SILICON
Applied Physics Letters, 1970
Structural and Optical Evaluation of Vacuum-Deposited GaP Films
Journal of Applied Physics, 1969
X‐Ray Investigation of Lattice Deformations in Silicon Induced through High‐Energy Ion Implantation
Physica Status Solidi (b), 1969