Electronic structure of SnS2, SnSe2, CdI2and PbI2
- 28 November 1979
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 12 (22) , 4753-4766
- https://doi.org/10.1088/0022-3719/12/22/017
Abstract
The band structures of the layer compounds SnS2, SnSe2, CdI2 and PbI2 are calculated by the tight-binding method. They are in closer agreement with experimental results and previous pseudopotential calculations than previous tight-binding results have been. A universal band structure for the family is found by use of approximate algebraic band energies. For the 16-electron crystals a Gamma 2- to L1+ indirect gap and a main optical transition due to anion p-cation p orbitals is found, whilst for PbI2 the gap is direct at A.Keywords
This publication has 46 references indexed in Scilit:
- Optical properties of SnSe2and SnS2Journal of Physics C: Solid State Physics, 1979
- Ultraviolet properties and band structure of SnS2, SnSe2, CdI2, PbI2, BiI3and BiOI crystalsJournal of Physics C: Solid State Physics, 1978
- Quantum-defect theory of heats of formation and structural transition energies of liquid and solid simple metal alloys and compoundsPhysical Review B, 1978
- Reflectivity and band structure of SnSe2Journal of Physics C: Solid State Physics, 1977
- Electronic structure of PbI2 from photoelectron spectra and the exciton problemSolid State Communications, 1977
- Temperature and hydrostatic pressure effects on the exciton spectra of some lead and cadmium halidesPhysical Review B, 1976
- Wavelength Modulation Spectra and Electronic Band Structure of SnS2 and SnSe2Physica Status Solidi (b), 1976
- Electronic structures of layer and chain elements by a local orbital methodPhilosophical Magazine, 1975
- Pseudopotential band structure of solid solutions SnSxSe2−xSolid State Communications, 1973
- Band Structures and Pseudopotential Form Factors for Fourteen Semiconductors of the Diamond and Zinc-blende StructuresPhysical Review B, 1966