Intrinsic radiative lifetimes of InP/In0.48Ga0.52P quantum dots
- 1 November 1995
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 96 (5) , 265-269
- https://doi.org/10.1016/0038-1098(95)00449-1
Abstract
No abstract availableThis publication has 25 references indexed in Scilit:
- Nanoscale InP islands embedded in InGaPApplied Physics Letters, 1995
- Spectroscopy of Quantum Levels in Charge-Tunable InGaAs Quantum DotsPhysical Review Letters, 1994
- Exciton dynamics in GaAs quantum wells under resonant excitationPhysical Review B, 1994
- Radiative lifetimes of excitons in quantum wells: Localization and phase-coherence effectsPhysical Review B, 1993
- Evidence for superradiant decay of excitons in InAs quantum sheetsPhysical Review B, 1992
- Optical- and acoustical-phonon-assisted hopping of localized excitons in CdTe/ZnTe quantum wellsPhysical Review B, 1992
- Enhanced radiative recombination of free excitons in GaAs quantum wellsPhysical Review Letters, 1991
- Fabrication and optical properties of semiconductor quantum wells and superlatticesProgress in Quantum Electronics, 1990
- Temperature Dependence of Exciton Lifetimes in GaAs/AlGaAs Quantum Well StructuresEurophysics Letters, 1990
- Giant oscillator strength of free excitons in GaAsPhysical Review B, 1987