Low frequency noise in CMOSTs at cryogenic temperatures

13 January 2003

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 133-136
https://doi.org/10.1109/ltse.1989.50197

Abstract

Low-frequency noise in silicon MOSFETs is characterized from room temperature down to 5 K. The input-referred noise spectra for n-channel transistors show no gate bias dependence, and the noise amplitude does not change by any significant order of magnitude at all temperatures. While the gate bias dependence in p-channel device flicker noise is observed at low temperature, some generation-recombination noise becomes dominant at temperatures below 30 K.

Keywords

This publication has 3 references indexed in Scilit:

Automated system for the measurement of fluctuation phenomena in FETs
Review of Scientific Instruments, 1988
CURRENT NOISE IN N-CHANNEL Si-MOSFETS AT 4.2 K.
Published by Elsevier ,1986
Low frequency noise in MOST's at cryogenic temperatures
Solid-State Electronics, 1968