Photoluminescence study on twenty GaAs/Al0.3Ga0.7As tilted T-shaped quantum wires fabricated by glancing-angle molecular beam epitaxy

Twenty ${\mathrm{GaAs/Al}}_{\mathrm{0.3}}{\mathrm{Ga}}_{\mathrm{0.7}}\mathrm{As}$ tilted T-shaped quantum wires (T-QWRs) on a (111)B facet were uniformly fabricated with a two-step growth of molecular beam epitaxy (MBE), which consists of a glancing-angle MBE of ${\mathrm{GaAs/Al}}_{\mathrm{0.3}}{\mathrm{Ga}}_{\mathrm{0.7}}\mathrm{As}$ multi-quantum well layer with 20 GaAs wells (a well width of $L_w\text{=6.1\hspace{0.5em}}\mathrm{nm}$ ) on reverse-mesa stripes on a (001) GaAs substrate and MBE overgrowth of a ${\mathrm{GaAs/Al}}_{\mathrm{0.3}}{\mathrm{Ga}}_{\mathrm{0.7}}\mathrm{As}$ single-quantum well with $L_w\text{=6.3\hspace{0.5em}}\mathrm{nm}$ on a (111)B facet. Full width at half maximum of a photoluminescence peak $(\mathrm{\lambda }\text{=792\hspace{0.5em}}\mathrm{nm})$ from the tilted T-QWRs was as small as 8.7 meV at 28 K, which is comparable with those (6 meV,Reference 5 10 meVReference 10) of conventional ${\mathrm{GaAs/Al}}_{\mathrm{0.3}}{\mathrm{Ga}}_{\mathrm{0.7}}\mathrm{As}$ T-QWRs (6.8 nm/5.8 nm, 7 nm/7 nm) fabricated by the cleaved-edge overgrowth.