Breakdown characteristics of RTO 10 nm SiO/sub 2/ films grown at different temperatures
- 1 November 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 15 (11) , 449-451
- https://doi.org/10.1109/55.334663
Abstract
Metal-oxide-semiconductor capacitors with 10 nm gate oxides grown by rapid thermal oxidation at temperatures of 1000, 1100 and 1150/spl deg/C have been electrically characterized by means of C-V techniques, time-zero and time-dependent breakdown experiments. The oxides grown at higher temperatures show superior interfacial and oxide integrity characteristics, which is consistent with a lower level of intrinsic stress in such layers. The overall improvement exhibited by similar samples annealed at the same temperatures also supports this idea. The opposite dependence on the growth temperature observed in TZDB with respect to TDDB experiences has been shown to be consistent with the trapping behaviour exhibited by the samples under study.<>Keywords
This publication has 13 references indexed in Scilit:
- Growth temperature dependence of the Si(001)/SiO2 interface widthApplied Physics Letters, 1994
- Correlation between midgap interface state density and thickness-averaged oxide stress and strain at Si/SiO2 interfaces formed by thermal oxidation of SiApplied Physics Letters, 1990
- Trap generation and occupation dynamics in SiO2 under charge injection stressJournal of Applied Physics, 1986
- Correlation Between Breakdown and Process‐Induced Positive Charge Trapping in Thin Thermal SiO2Journal of the Electrochemical Society, 1986
- Hole trapping and breakdown in thin SiO2IEEE Electron Device Letters, 1986
- A Viscous Flow Model to Explain the Appearance of High Density Thermal SiO2 at Low Oxidation TemperaturesJournal of the Electrochemical Society, 1982
- Dependence of Interface State Density on Silicon Thermal Oxidation Process VariablesJournal of the Electrochemical Society, 1979
- Dielectric breakdown in electrically stressed thin films of thermal SiO2Journal of Applied Physics, 1978
- Viscous flow of thermal SiO2Applied Physics Letters, 1977
- Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized SiliconJournal of the Electrochemical Society, 1967