High-performance pentacene field-effect transistors using Al2O3 gate dielectrics prepared by atomic layer deposition (ALD)
- 5 July 2007
- journal article
- Published by Elsevier in Organic Electronics
- Vol. 8 (6) , 718-726
- https://doi.org/10.1016/j.orgel.2007.06.009
Abstract
No abstract availableKeywords
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