Radiative and Non-Radiative Processes for the light Emission from Porous Silicon
- 1 January 1992
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Highly porous silicon, well passivated via an anodic oxidation process, is a stable and efficient visible light emitter showing a 3% photoluminescence efficiency at room temperature. Luminescence decay times are on the order of 100 μs at room temperature and 10 ms at low temperature. Above room temperature the de-excitation is dominated by non-radiative processes well describe by a tunnelling escape of carriers from confined regions. The “anomalous” luminescence behaviour showing a dramatic increase of the lifetimes upon cooling associated with a decrease of the intensity is explained by the temperature dependence of the effective radiative recombination rates due to a population redistribution among two excited states with very different radiative relaxation rates.Keywords
This publication has 14 references indexed in Scilit:
- Mechanisms of visible-light emission from electro-oxidized porous siliconPhysical Review B, 1992
- Current-induced light emission from a porous silicon deviceIEEE Electron Device Letters, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- Quantum size effects on photoluminescence in ultrafine Si particlesApplied Physics Letters, 1990
- Photoluminescence Study of the Gallium Defect Spectrum at ≈ 1.049 ev (Ga2) in Irradiated SiliconPhysica Status Solidi (b), 1986
- Electroluminescence studies in silicon dioxide films containing tiny silicon islandsJournal of Applied Physics, 1984
- Magnetic and uniaxial stress perturbations of optical transitions at a four Li atom complex in SiJournal of Physics C: Solid State Physics, 1984
- Absorption and laser excited fluorescence of hexavalent uranium in LiFThe Journal of Chemical Physics, 1979
- Uniaxially stressed silicon: Fine structure of the exciton and deformation potentialsPhysical Review B, 1978
- Fluorescent Decay Times of Excitons Bound to Isoelectronic Traps in GaP and ZnTePhysical Review B, 1967