Photoexcitation effects in semi-insulating GaAs as revealed by electron paramagnetic resonance

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Abstract
A set of semi-insulating bulk GaAs samples of various specifications and origins has been studied under illumination conditions proper to reveal quenchable paramagnetic signals behaving like the metastable electrical defect EL2. Whereas In-alloyed crystals are almost free of any defect, all other materials display photosensitive signals which are either a quenchable quadruplet constrainable to the As4+Ga configuration or two enhanceable singlets not yet fully identified; the preferred occurrence of either type of spectrum is seemingly linked to the growth method.