1.9 GHz/5.8 GHz-band on-chip matching Si-MMIC low noise amplifiers fabricated on high resistive Si substrate
- 20 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2, 493-496 vol.2
- https://doi.org/10.1109/mwsym.1999.779809
Abstract
The use of high resistive Si substrate, instead of conventional low resistive Si substrate, enables one to reduce the loss of spiral inductor for on-chip matching circuit by 61% at 1.9 GHz and by 78% at 5.8 GHz, and to improve gain and noise performance of the BJT. These improvements are explained as the reduction of dielectric loss of substrate by referring to equivalent circuit model extraction. The fabricated 1.9 GHz-band on-chip matching LNA performs 13.4 dB gain, 1.9 db NF with 2 V, 2mA d.c. power and 5.8 GHz-band LNA performs 6.9 dB gain, 3.3 dB NF with 3 V, 3 mA d.c, power.Keywords
This publication has 5 references indexed in Scilit:
- A high performance CBiCMOS with novel self-aligned vertical PNP transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 2.7 V DECT RF transceiver with integrated VCOPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A 2-V, 1-10 GHz BiCMOS transceiver chip for multimode wireless communications networksIEEE Journal of Solid-State Circuits, 1997
- On-chip matching Si-MMIC for mobile communication terminal applicationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1997
- Coplanar waveguides and microwave inductors on silicon substratesIEEE Transactions on Microwave Theory and Techniques, 1995