Optical transitions of infinite and finite strained Si/Ge superlattices

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Abstract
A systematic study of the optical transitions of pseudomorphically strained (Si) n /(Ge) n superlattices grown on Si1−x Ge x (001) buffers is presented. The influence of period (n+m), synthesis (n/m), and strain on the transition energies and transition probabilities at the Γ point is studied. This is performed with the use of a realistic tight‐binding model in the three‐center representation. The transition energies and probabilities for the finite superlattices (Si)4/(Ge)4 inside Si and (Si)5/(Ge)5superlattice inside Ge are also studied. It is proposed that the most promising material for optoelectronic applications is the strain‐symmetrized (Si)4/(Ge)6 strained layer superlattice.