Charged Defect State Distributions Obtained from the Analysis of Photoconductivities in Intrinsic a-Si:H Films

This publication has 21 references indexed in Scilit:

• The defect-pool model and charged defects in amorphous silicon
  Journal of Non-Crystalline Solids, 1993
• Improved defect-pool model for charged defects in amorphous silicon
  Physical Review B, 1993
• Differences between light induced and native midgap states in intrinsic hydrogenated amorphous silicon obtained from detailed modeling of photoconductivities and subband-gap absorption
  Applied Physics Letters, 1992
• Potential Role for Charged Dangling Bonds in Transient-Lesr of Light-Soaked a-Si:H
  MRS Proceedings, 1992
• Effect of midgap states in intrinsic hydrogenated amorphous silicon on sub-band-gap photoconductivity
  Applied Physics Letters, 1991
• Potential fluctuations due to inhomogeneity in hydrogenated amorphous silicon and the resulting charged dangling-bond defects
  Physical Review B, 1990
• Light-induced dangling bonds in hydrogenated amorphous silicon
  Applied Physics Letters, 1981
• Photoconductivity, trapping, and recombination in discharge-produced, hydrogenated amorphous silicon
  Physical Review B, 1981
• Reversible conductivity changes in discharge-produced amorphous Si
  Applied Physics Letters, 1977
• Nonequilibrium Steady-State Statistics and Associated Effects for Insulators and Semiconductors Containing an Arbitrary Distribution of Traps
  Physical Review B, 1971