The Effects of Impurity Codoping on the Electrical Properties of Erbium Ions in Crystalline Silicon
- 1 January 1996
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- The effects of oxygen and defects on the deep-level properties of Er in crystalline SiJournal of Applied Physics, 1995
- The erbium-impurity interaction and its effects on the 1.54 μm luminescence of Er3+ in crystalline siliconJournal of Applied Physics, 1995
- Oxygen precipitation in siliconJournal of Applied Physics, 1995
- Optical activation and excitation mechanisms of Er implanted in SiPhysical Review B, 1993
- Optical doping of silicon with erbium by ion implantationNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1993
- The mechanisms of electronic excitation of rare earth impurities in semiconductorsSemiconductor Science and Technology, 1993
- Local structure of 1.54-μm-luminescence Er3+ implanted in SiApplied Physics Letters, 1992
- The electrical and defect properties of erbium-implanted siliconJournal of Applied Physics, 1991
- Impact excitation of the erbium-related 1.54 μm luminescence peak in erbium-doped InPApplied Physics Letters, 1991
- Physics of Semiconductor DevicesPhysics Today, 1970