Effect of atmospheric pressure MOCVD growth conditionsonUV band-edge photoluminescence in GaN thin films
- 22 June 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (13) , 1102-1103
- https://doi.org/10.1049/el:19950741
Abstract
Strong band-edge luminescence in GaN films grown by atmospheric pressure MOCVD is observed. The effect of the growth temperature and V/III ratio on the band-edge to deep level luminescence ratio (Ib/Id) indicates that a large supply of active nitrogen is essential for obtaining excellent optical properties. GaN grown under optimised conditions exhibits an Ib/Id ratio of 10.9 at 300 K and 1300 at 22 K.Keywords
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