Two-Dimensional Epitaxial Growth of Bi2Sr2CuOx on Tilted SrTiO3(001) Substrates Studied by Reflection High Energy Electron Diffraction

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Abstract
Growth modes of Bi2Sr2CuO x (2201) thin epitaxial films have been studied by coevaporation technique in molecular beam epitaxy (MBE) on tilted SrTiO3(001) substrates with angles of 2°, 4°, and 6° toward [110]. Observation of RHEED intensity oscillations means that the growth proceeds by two-dimensional mode. After continued growth over 1.2 nm, clear RHEED patterns of the known superstructures were observed. For the 2° tilted substrates, the RHEED patterns indicated that most of the films consisted of untwinned structure with small portions of twinned structure. For 4° and 6°-tilted substrates, however, the RHEED patterns of untwinned structures were observed. Furthermore for 6°-tilted substrates, the RHEED patterns showed separated streaks, arising from the periodic step structures, which was not originally observed on the substrate surface.