MBE growth of GaInAsSb p/n junction diodes for thermophotovoltaic applications
- 1 May 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 175-176, 877-882
- https://doi.org/10.1016/s0022-0248(96)00977-3
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- Type II heterojunctions in the GaInAsSb/GaSb systemSemiconductor Science and Technology, 1994