Investigation of formation conditions of thermal donors-I and -II in oxygen-containing n-type silicon within the temperature range 400 to 800°C
- 16 August 1983
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 78 (2) , 733-739
- https://doi.org/10.1002/pssa.2210780243
Abstract
No abstract availableKeywords
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