GaInAs/InP composite channel HEMT's
- 1 January 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 40 (11) , 2112
- https://doi.org/10.1109/16.239782
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- InGaAs/InP double channel HEMT on InPPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- High-power V-band AlInAs/GaInAs on InP HEMTsIEEE Electron Device Letters, 1993
- V-band high-efficiency high-power AlInAs/GaInAs/InP HEMT'sIEEE Transactions on Microwave Theory and Techniques, 1993