Si and SiC layer transfer by high temperature hydrogenimplantation and lower temperature layer splitting
- 19 February 1998
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 34 (4) , 407-408
- https://doi.org/10.1049/el:19980295
Abstract
High quality Si and SiC layers which were implanted by H at 400 and 800°C, respectively, were transferred onto an Si substrate and glass by wafer bonding and layer splitting at temperatures lower than the corresponding H-implantation temperatures.Keywords
This publication has 3 references indexed in Scilit:
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- Layer splitting process in hydrogen-implanted Si, Ge, SiC, and diamond substratesApplied Physics Letters, 1997
- Silicon on insulator material technologyElectronics Letters, 1995