High mobility InP epitaxial layers prepared by atmospheric pressure MOVPE using trimethylindium dissociated from an adduct with 1,2-bis(diphenyl phosphino)ethane
- 1 September 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 77 (1-3) , 19-22
- https://doi.org/10.1016/0022-0248(86)90275-7
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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- Growth of ultrapure and Si-doped InP by low pressure metalorganic chemical vapor depositionApplied Physics Letters, 1985
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- Indium phosphide chloride vapour phase epitaxy — A re-appraisalJournal of Crystal Growth, 1983
- The growth of ultra-pure InP by vapour phase epitaxyJournal of Crystal Growth, 1983
- Electron mobility and free-carrier absorption in InP; determination of the compensation ratioJournal of Applied Physics, 1980