Silicon-implanted SiO2 for nonvolatile memory applications
- 30 September 1993
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 36 (9) , 1321-1324
- https://doi.org/10.1016/0038-1101(93)90171-l
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Memory effects of silicon-implanted oxides for electrically erasable programmable read-only memory applicationsApplied Physics Letters, 1993
- A model of charge transport in thermal SiO2 implanted with SiSolid-State Electronics, 1990
- Electronic states at SiSiO2 interface introduced by implantation of Si in thermal SiO2Solid-State Electronics, 1990
- Enhanced conduction and minimized charge trapping in electrically alterable read-only memories using off-stoichiometric silicon dioxide filmsJournal of Applied Physics, 1984