Electronic states at SiSiO2 interface introduced by implantation of Si in thermal SiO2
- 1 May 1990
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 33 (5) , 523-530
- https://doi.org/10.1016/0038-1101(90)90236-8
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Charge trapping in silicon-rich Si3N4 thin filmsSolid-State Electronics, 1987
- IVB-2 memory effect and enhanced conductivity in Si-implanted thermally grown SiO2IEEE Transactions on Electron Devices, 1987
- Gap states in silicon nitrideApplied Physics Letters, 1984
- Defect and impurity states in silicon nitrideJournal of Applied Physics, 1983
- Theory of defects in vitreous silicon dioxidePhysical Review B, 1983
- Theory of the electronic structure of the Si-SiinterfacePhysical Review B, 1980
- Diffusion du silicium dans la silice amorpheActa Metallurgica, 1980
- Bulk electronic structure of SiPhysical Review B, 1979
- Production and Annealing of Color Centers in rf Sputtered SiO2 FilmsJournal of Applied Physics, 1971
- Electronic structure of defect centers in SiO2Journal of Physics and Chemistry of Solids, 1971