n-Si/p-Si1−xGex/n-Si double-heterojunction bipolar transistors
- 27 June 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (26) , 2239-2241
- https://doi.org/10.1063/1.99543
Abstract
Two different structures of n‐Si/p‐Si1−xGex/n‐Si double‐heterojunction bipolar transistors have been fabricated by molecular beam epitaxy. A common emitter current gain β of about 15 was demonstrated in one kind of structure and the β‐IC curve has been investigated. In the other structure, a novel multistep collector current IC vs collector‐emitter voltage VCE characteristic together with a strong negative resistance behavior was observed at room temperature. In this letter the basic experiments are described; a comparison and a discussion of the two kinds of devices are presented.Keywords
This publication has 6 references indexed in Scilit:
- Current transport in strained n-Si1−xGex/p-Si heterojunction diodesJournal of Applied Physics, 1988
- New method to study band offsets applied to strainedheterojunction interfacesPhysical Review B, 1987
- Summary Abstract: Thermal and accelerated (≤200 eV) In doping of Si(100) layers during molecular beam epitaxyJournal of Vacuum Science & Technology A, 1986
- Measurement of the band gap of GexSi1−x/Si strained-layer heterostructuresApplied Physics Letters, 1985
- Pseudomorphic growth of GexSi1−x on silicon by molecular beam epitaxyApplied Physics Letters, 1984
- A one-dimensional SiGe superlattice grown by UHV epitaxyApplied Physics A, 1975