Luminescence from Strained Si1-xGex/Si Quantum Wells Grown by Si Molecular Beam Epitaxy
- 1 March 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (3S)
- https://doi.org/10.1143/jjap.32.1502
Abstract
Excitonic luminescence was observed from strained Si1-x Ge x /Si quantum wells (QWs) grown on Si(100), (111) and (110) substrates using Si molecular beam epitaxy (Si MBE). Influence of growth environment and quality of the crystal on the luminescence efficiency is described. Quantum confinement of excitons was clearly indicated by the characteristic energy shift of luminescence peak energy with decreasing well width. The emission peak of QWs was found to be shifted to higher energies due to Ge segregation-induced potential profile distortion. This energy shift was effectively removed by the adoption of the segregant-assisted growth (SAG) scheme using an Sb adlayer. Room temperature electroluminescence was observed from strained Si0.65Ge0.35/Si QWs grown on both (100) and (111) substrates.Keywords
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