Electroluminescence from a pseudomorphic Si0.8Ge0.2 alloy
- 9 September 1991
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (11) , 1350-1352
- https://doi.org/10.1063/1.105305
Abstract
Electroluminescence due to recombination of electrons and holes at the band edges of strained Si1−xGex alloy is reported for the first time. This is demonstrated by comparison of the luminescence energy with the photoconductivity threshold of a p‐i‐n diode incorporating Si0.8Ge0.2, and with the calculated energy gap for the pseudomorphic alloy. The luminescence is strong at low temperature and persists to 220 K. The high intensity of the no‐phonon line relative to the momentum‐conserving phonon replica in the spectrum shows the scattering in the random alloy is a practical and effective mechanism for enhancing the recombination probability in this indirect semiconductor.Keywords
This publication has 13 references indexed in Scilit:
- Well-resolved band-edge photoluminescence of excitons confined in strained quantum wellsPhysical Review Letters, 1991
- Electroluminescence and photoluminescence from Si1−xGex alloysApplied Physics Letters, 1991
- Near-band-gap photoluminescence of Si1−xGex alloys grown on Si(100) by molecular beam epitaxyApplied Physics Letters, 1990
- Intense photoluminescence between 1.3 and 1.8 μm from strained Si1−xGex alloysApplied Physics Letters, 1990
- Electroluminescence from sulfur impurities in a p-n junction formed in epitaxial siliconApplied Physics Letters, 1989
- 1.3-μm light-emitting diode from silicon electron irradiated at its damage thresholdApplied Physics Letters, 1987
- Measurement of the band gap of GexSi1−x/Si strained-layer heterostructuresApplied Physics Letters, 1985
- 1.54-μm electroluminescence of erbium-doped silicon grown by molecular beam epitaxyApplied Physics Letters, 1985
- Photon generation in forward-biased silicon p-n junctionsIEEE Electron Device Letters, 1983
- Radiation Resulting from Recombination of Holes and Electrons in SiliconPhysical Review B, 1956