Electroluminescence from sulfur impurities in a p-n junction formed in epitaxial silicon
- 10 July 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (2) , 100-102
- https://doi.org/10.1063/1.102115
Abstract
We characterize the behavior of electroluminescence from a sulfur‐related impurity complex in a p‐n junction formed in epitaxial silicon. The spectrum of the electroluminescence matches that of previously reported photoluminescence from sulfur impurities and persists to ∼150 K. In our structure, we find that the electroluminescence exhibits an external quantum efficiency of 0.2–0.5%.Keywords
This publication has 13 references indexed in Scilit:
- Radiative decay of excitons bound to chalcogen-related isoelectronic impurity complexes in siliconPhysical Review B, 1988
- Concentration dependence of optical emission from sulfur-doped crystalline siliconApplied Physics Letters, 1987
- 1.3-μm light-emitting diode from silicon electron irradiated at its damage thresholdApplied Physics Letters, 1987
- Optical emission from impurities within an epitaxial-silicon optical waveguideOptics Letters, 1987
- Optical Emission From Crystalline SiliconPublished by SPIE-Intl Soc Optical Eng ,1987
- Optical emission at 1.32 μm from sulfur-doped crystalline siliconApplied Physics Letters, 1986
- All-silicon active and passive guided-wave components for λ = 1.3 and 1.6 µmIEEE Journal of Quantum Electronics, 1986
- 1.54-μm electroluminescence of erbium-doped silicon grown by molecular beam epitaxyApplied Physics Letters, 1985
- 1.54-μm luminescence of erbium-implanted III-V semiconductors and siliconApplied Physics Letters, 1983
- Isoelectronic Traps Due to Nitrogen in Gallium PhosphidePhysical Review Letters, 1965