W-band InP wideband MMIC LNA with 30 K noise temperature
- 20 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 101-104 vol.1
- https://doi.org/10.1109/mwsym.1999.779434
Abstract
This paper describe a millimeter wave low noise amplifier with extraordinary low noise, low power consumption, and wide frequency range. These results are achieved utilizing state-of-the-art InP HEMTs coupled with CPW circuit design. The paper describes the transistor model, as well as modeled and measured on-wafer and in-module results at both 300 K and 24 K operating temperatures for several samples of the device.Keywords
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