Strained silicon NMOS with nickel-silicide metal gate
- 1 March 2004
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Strained Si NMOS transistors with Lgate down to 35 nm were fabricated using NiSi as a metal gate electrode material for the first time. Compared to poly gate devices, NiSi metal gate devices showed further enhanced performance with good control of short channel effects and no degradation in gate oxide integrity.Keywords
This publication has 3 references indexed in Scilit:
- Interfacial reactions of Ni on Si1−xGex (x=0.2, 0.3) at low temperature by rapid thermal annealingJournal of Applied Physics, 2002
- Carrier mobilities and process stability of strained Si n- and p-MOSFETs on SiGe virtual substratesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2001
- Measurement of I-V curves of silicon-on-insulator (SOI) MOSFET's without self-heatingIEEE Electron Device Letters, 1995