A monolithically integrated 1-Gb/s silicon photoreceiver
- 1 January 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 11 (1) , 120-121
- https://doi.org/10.1109/68.736415
Abstract
We report a monolithically integrated optical receiver consisting of a silicon NMOS transimpedance preamplifier paired with a lateral, interdigitated p-i-n photodiode. The preamplifier achieved a bandwidth of 500 MHz, a transimpedance of 51.4 dB-/spl Omega/ and dissipated only 10.8 mW of power at a power supply voltage of 1.8 V. At a bit-error rate of 10/sup -9/, the receiver exhibited sensitivities of -22.8, -15, and -9.3 dBm at bit rates of 622 Mb/s, 900 Mb/s, and 1 Gb/s, respectively. To the best of the authors' knowledge this is the highest sensitivity at 1 Gb/s reported for a silicon monolithically integrated optical receiver.Keywords
This publication has 5 references indexed in Scilit:
- 1 Gbit/s CMOS photoreceiver with integrated detectoroperating at 850 nmElectronics Letters, 1998
- Monolithically integrated SiGe-Si PIN-HBT front-end photoreceiversIEEE Photonics Technology Letters, 1998
- A silicon NMOS monolithically integrated optical receiverIEEE Photonics Technology Letters, 1997
- Two-channel 5 Gbit/s silicon bipolar monolithicreceiver for parallel optical interconnectsElectronics Letters, 1994
- A 3.3-V monolithic photodetector/CMOS-preamplifier for 531 Mb/s optical data link applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1993