Temperature Dependent Breakdown Characteristics in InP/InGaAs Avalanche Photodiodes
- 1 March 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (3A) , L301-303
- https://doi.org/10.1143/jjap.35.l301
Abstract
The temperature dependence on the breakdown voltages of InP/InGaAs avalanche photodiode was investigated in the range between -20°C and 100°C. It was found that the normalized first derivative of the breakdown voltage with respect to temperature decreased linearly as the breakdown voltage increased. Furthermore, the extrapolations of all the tested samples converge at the temperature independent limiting value of breakdown voltage. According to our analysis on these phenomena, we propose an empirical formula of temperature dependent breakdown voltages.Keywords
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