Structural and electrical properties of unintentionally doped 4H-SiC epitaxial layers—Grown by hot-wall CVD
- 1 March 2001
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 30 (3) , 207-211
- https://doi.org/10.1007/s11664-001-0017-z
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Step-controlled epitaxial growth of SiC: High quality homoepitaxyMaterials Science and Engineering: R: Reports, 1997
- Growth of SiC by ?Hot-Wall? CVD and HTCVDPhysica Status Solidi (b), 1997
- SiC Dopant Incorporation Control Using Site-Competition CVDPhysica Status Solidi (b), 1997