Hydrogen Motion in Defect Complexes: Reorientation Kinetics of the B-H Complex in Silicon

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Abstract
The motion of hydrogen in the B-H complex in silicon has been studied. An applied stress is used to produce a preferential alignment of the B-H complex at temperatures sufficiently high for the H to move within the complex (above ∼60 K). This alignment of the complexes is detected by comparing the optical-absorption strengths of the H stretching vibration for light polarized parallel and perpendicular to the stress axis. From the kinetics of the decay of alignment after the stress is removed we show that the motion of H from bond-centered site to bond-centered site around the B atom is thermally activated with an activation energy of 0.19 eV.