Uniform Depth Profiling in X-ray Photoelectron Spectroscopy (Electron Spectroscopy for Chemical Analysis)
- 1 March 1978
- journal article
- research article
- Published by SAGE Publications in Applied Spectroscopy
- Vol. 32 (2) , 175-177
- https://doi.org/10.1366/000370278774331468
Abstract
The difficulties of nonuniform ion etching which hamper depth profiling by X-ray photoelectron spectroscopy (XPS) have been overcome by use of a mechanically scanned saddle-field ion source. The system and its calibration for uniformity are described, and its performance is illustrated by the depth profile of a Si3N4/SiO2/Si metal nitride oxide silicon device. This also allows the potential advantages of XPS profiling over Auger electron spectroscopy profiling to be discussed.Keywords
This publication has 3 references indexed in Scilit:
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- The ionic charge states produced by the oscillating electron electrostatic ion sourceJournal of Physics E: Scientific Instruments, 1974
- Sensitivity of detection of the elements by photoelectron spectrometryAnalytical Chemistry, 1972