Stage-I recovery of prequenched and electron-irradiated pure aluminum and of the alloy Al-15 ppm Ag

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Abstract
High-purity Al and the alloy Al-15 ppm Ag have been irradiated with electrons at liquid-helium temperatures. The influence of various parameters (electron energy and dose, impurity content and the, presence of excess vacancies introduced by prequenching or irradiation doping) upon the annealing spectra of the radiation-induced residual electrical resistivity was determined. Besides the usually observed recovery substages in stage I ( IB, IC, ID, and IE), we have found several supplementary structures labelled IA (at 14–15 K), IC′ (at 26–27 K), ID′ (at 33 K), ID″ (at 39 K), and IF (between 53 and 59 K). The observed characteristics are compatible with the attribution of the substages IA, IB, IC′, and IC to close-pair recombination; ID′, ID, and ID″ to correlated migration of interstitials; IE to the recombination of freely migrating interstitials; and IF to the migration of diinterstitials.