Chemical basis for InP-metal Schottky-barrier formation
- 15 May 1981
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (10) , 784-786
- https://doi.org/10.1063/1.92162
Abstract
Soft‐x‐ray photoemission measurements of ultrahigh vacuum‐cleaved InP‐metal interfaces reveal two classes of microscopic chemical structure. Reactive metal (Al,Ni)‐InP interfaces display cation‐rich outdiffusion, atomically abrupt microstructure, and low Schottky‐barrier height (φSB), while unreactive metal (Au, Cu)‐InP interfaces exhibit anion‐rich outdiffusion, diffuse microstructure, and high φSB . For InP and other III‐V compound semiconductor‐metal junctions,chemical bond strength dominates local atomic structure and the type of electrically‐active sites produced near the interface. These features can be controlled extrinsically by Al or Ni interlayers.Keywords
This publication has 8 references indexed in Scilit:
- Atomic Modulation of Interdiffusion at Au-GaAs InterfacesPhysical Review Letters, 1980
- Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface StatesPhysical Review Letters, 1980
- Characterization of ohmic contacts to InPThin Solid Films, 1979
- Behavior of Au/InP Schottky diodes under heat treatmentJournal of Applied Physics, 1979
- Chemical effects in Schottky barrier formationJournal of Physics C: Solid State Physics, 1978
- Transition in Schottky Barrier Formation with Chemical ReactivityPhysical Review Letters, 1978
- The probing depth in photoemission and auger-electron spectroscopyJournal of Electron Spectroscopy and Related Phenomena, 1974
- Metal-semiconductor surface barriersSolid-State Electronics, 1966