Single longitudinal mode operation of two-section GaInAsP/InP lasers under pulsed excitation
- 1 June 1983
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 19 (6) , 1057-1062
- https://doi.org/10.1109/jqe.1983.1071989
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- On the Formation of Planar‐Etched Facets in GaInAsP / InP Double HeterostructuresJournal of the Electrochemical Society, 1983
- Single-mode operation of coupled-cavity GaInAsP/InP semiconductor lasersApplied Physics Letters, 1983
- Generation of single-longitudinal-mode subnanosecond light pulses by high-speed current modulation of monolithic two-section semiconductor lasersElectronics Letters, 1982
- Etched mirror and groove-coupled GaInAsP/InP laser devices for integrated opticsIEEE Journal of Quantum Electronics, 1982
- Low-threshold-current distributed-feedback InGaAsP/InP CW lasersElectronics Letters, 1982
- External cavity controlled single longitudinal mode laser transmitter moduleElectronics Letters, 1981
- Crystallographic facets chemically etched in GaInAsP/InP for integrated opticsElectronics Letters, 1981
- GaInAsP/InP laser with monolithically integrated monitoring detectorElectronics Letters, 1980
- GaInAsP/InP Integrated Twin-Guide Lasers with First-Order Distributed Bragg Reflectors at 1.3 µm WavelengthJapanese Journal of Applied Physics, 1980
- Power Waves and the Scattering MatrixIEEE Transactions on Microwave Theory and Techniques, 1965