Minority-carrier properties of GaAs on silicon

18 July 1988

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 53 (3) , 222-224
https://doi.org/10.1063/1.100137

Abstract

The minority-carrier lifetimes of the heteroepitaxial system of GaAs on Si are limited by recombination at mismatch dislocations. Here we show that increasing the thickness of the buffer layer, with an additional annealing step, reduces the dislocation density by about an order of magnitude. At the same time, the minority-carrier lifetime in these double heterostructures increases more than an order of magnitude.

Keywords

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