Low pressure organometallic vapor phase epitaxial growth of device quality GaAs directly on (100) Si
- 25 August 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (8) , 467-469
- https://doi.org/10.1063/1.97118
Abstract
The epitaxial growth and properties of GaAs layers directly deposited on (100) Si substrates using a low-temperature process are reported. The GaAs layers were grown by organometallic vapor phase epitaxy with a two-step process and without any high-temperature heat treatment of the Si substrates. The layers were of single domain with net carrier concentrations less than 1014 cm−3. Intentionally doped n-type layers (Nd≂1016 cm−3) showed room-temperature electron mobility of 5780 cm2/V s. The high structural quality of GaAs is demonstrated by device characteristics as well as by x-ray diffraction measurements. The observation that an intrinsic mechanism dominates the photoluminescence spectra is another indication of high quality epitaxy.Keywords
This publication has 17 references indexed in Scilit:
- Growth and properties of GaAs/AlGaAs on nonpolar substrates using molecular beam epitaxyJournal of Applied Physics, 1985
- Polyvinyl Alcohol Film Coating Effect on Novolac-Based Positive Electron Resist Sensitivity in X-Ray Lithography in an Atmospheric EnvironmentJapanese Journal of Applied Physics, 1985
- Metal-semiconductor field-effect transistors fabricated in GaAs layers grown directly on Si substrates by molecular beam epitaxyApplied Physics Letters, 1984
- Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVDJapanese Journal of Applied Physics, 1984
- Molecular beam epitaxial growth and material properties of GaAs and AlGaAs on Si (100)Applied Physics Letters, 1984
- GaAs light-emitting diodes fabricated on Ge-coated Si substratesApplied Physics Letters, 1984
- Molecular beam epitaxial growth of GaP on SiJournal of Applied Physics, 1984
- Polar heterojunction interfacesPhysical Review B, 1978
- Antiphase domain structures in GaP and GaAs epitaxial layers grown on Si and GeJournal of Crystal Growth, 1977
- Oriented Growth of Semiconductors. III. Growth of Gallium Arsenide on GermaniumJournal of Applied Physics, 1966