Formation of Cubic GaN on (111)B GaAs by Metal-Organic Vapor-Phase Epitaxy with Dimethylhydrazine
- 1 June 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (6R)
- https://doi.org/10.1143/jjap.33.3415
Abstract
The microstructure of GaN grown on (111)B GaAs by a metal-orgnic vapor-phase epitaxy method has been examined by transmission electron microscopy. Trimethylgallium and dimethylhydrazine were used as the source materials. It was revealed that the GaN crystal has a zincblende structure and is formed heterogeneously penetrating into the GaAs substrate. In a GaN crystal, stacking faults propagate on {111} planes other than those normal to the growth direction.Keywords
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