Hetero-epitaxial growth of cubic GaN on GaAs by gas-source molecular beam epitaxy
- 31 December 1992
- journal article
- Published by Elsevier in Surface Science
- Vol. 267 (1-3) , 50-53
- https://doi.org/10.1016/0039-6028(92)91086-q
Abstract
No abstract availableKeywords
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