Optical transitions in strained Ge/Si superlattices
- 15 March 1992
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 45 (12) , 6793-6801
- https://doi.org/10.1103/physrevb.45.6793
Abstract
Spectroscopic ellipsometry has been used to determine the dielectric functions of ultrathin Ge/Si superlattices with varying strain states and periodicity at room temperature. The -like transitions could be resolved with the multiple-angle-of-incidence technique and in a thick, Ge-rich sample; they split up into various contributions and start to absorb the light at lower energies than compositionally equivalent alloys, as predicted theoretically. The transitions are shifted towards lower energies and split into a doublet. Both of its components show a shift due to the hydrostatic component of the internal strain, which is approximately half of what one would expect from the corresponding deformation potentials of the constituent bulk materials. While both transitions decrease in energy with increasing period, only the lower peak shows a variation of its amplitude and broadening with period, yielding evidence for confinement effects.
Keywords
This publication has 26 references indexed in Scilit:
- Erratum: Linear optical properties of strained (Si/(Gesuperlattices on (001) Si substrates [Phys. Rev. B41, 5112 (1990)]Physical Review B, 1990
- Interband transitions in strain-symmetrizedsuperlatticesPhysical Review Letters, 1990
- Spectroscopic ellipsometry of-like transitions in nanometer-thickness Ge layersPhysical Review Letters, 1990
- Raman spectra of SinGem superlattices: Theory and experimentJournal of Applied Physics, 1989
- Resonant Raman scattering in short-period (Si/(GesuperlatticesPhysical Review B, 1989
- Optical spectra of SixGe1−x alloysJournal of Applied Physics, 1989
- Electronic structure of Ge/Si monolayer strained-layer superlatticesPhysical Review B, 1989
- Silicon-germanium alloys and heterostructures: Optical and electronic propertiesCritical Reviews in Solid State and Materials Sciences, 1989
- Symmetrically strained Si/Ge superlattices on Si substratesPhysical Review B, 1988
- Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eVPhysical Review B, 1983